LS627 [Linear Systems]
PHOTO FET LIGHT SENSITIVE JFET; PHOTO FET感光JFET
| 型号： | LS627 |
| 厂家： | 
Linear Systems |
| 描述： | PHOTO FET LIGHT SENSITIVE JFET |
| 文件： | 总2页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS627
PHOTO FET
Linear Integrated Systems
LIGHT SENSITIVE JFET
FEATURES
DIRECT REPLACEMENT FOR CRYSTALONICS FF627
FLAT GLASS TOP FOR EXTERNAL OPTICS
ULTRA HIGH SENSITIVITY
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
TO-72
BOTTOM VIEW
D
S
2
1
3
4
G
C
-65 to +200 °C
-55 to +165 °C
400mW
50mA
Maximum Voltages
Drain to Source
Drain to Gate
15V
15V
-10V
Gate to Source
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
VGS(off)
SG
CHARACTERISTIC
MIN TYP MAX
UNITS
CONDITIONS
VDS = 10V, ID = 0.1µA
VDS = 10V, VGS = 0V, λ = 0.9µm
Gate to Source Cutoff Voltage (VPO
)
1.0
6.4
5.0
24
V
Gate Sensitivity2
µA/mW/cm2
SD
Drain Sensitivity3
500
800
mA/mW/cm2 VDS = 10V, VGS = 0V, RG = 1MΩ
Gate Current (Light)4
10
8.0
37.5
30
nA/FC
µA/FC
mA
pA
µS
VDS = 10V, VGS = 0V
VDS = 10V, VGS = 0V, RG = 1MΩ
VDS = 10V, VGS = 0V
VGS = -10V, VDS = 0V
VDS = 10V, VGS = 0V, f = 1kHz
VDS = 0.1V, VGS = 0V
λ
Ig
Drain Current (Light)4
Drain Saturation Current
Gate Leakage Current (Dark)
Forward Transconductance (gm)
Drain to Source On Resistance
Gate to Source Capacitance
Gate to Drain Capacitance
Rise Time5
λ
Id
IDSS
IGSS
gfs
RDS(on)
CGS
CGD
tr
8000
100
Ω
35
20
VGS = -10V, f = 140kHz
VGD = -10V, f = 140kHz
pF
ns
30
50
VDS = 10V, RL = RG = 100Ω
tf
Fall Time6
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
TO-72
Four Lead
0.230
0.209
DIA.
0.195
0.175
DIA.
0.030
MAX.
0.150
0.115
4 LEADS
0.500 MIN.
0.050
0.019
0.016
DIA.
0.100
2
4
1
3
45°
0.046
0.036
0.048
0.028
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Gate Current per unit Radient Power Density at Lens Surface
3. Drain Current per unit Radient Power Density (λ = 0.9µm).
4. Tungsten Lamp 2800°K Color Temperature.
5. GaAs Diode Source.
6. Directly Proportional to RG.
7. Not production tested. Guaranteed by design.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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